Current-voltage characterization and 3D device modelling of p-type induced junction photodiode; surface recombination velocity and bulk lifetime

A p-type silicon-based induced junction photodiode has been investigated with current-voltage (I-V) measurement under laser illumination at multiple power levels, and the results are fitted using 3D device simulations. When considering multiple laser power levels, it is found that material parameter...

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Bibliographic Details
Published in2018 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) pp. 1 - 2
Main Authors Tang, Chi Kwong, Nordsveen, Marit Ulset, Gran, Jarle
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.11.2018
Subjects
Current measurement
Junctions
Measurement by laser beam
Photodiodes
Power lasers
Power measurement
Semiconductor lasers
Solid modeling
Three-dimensional displays
Voltage measurement
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Summary:A p-type silicon-based induced junction photodiode has been investigated with current-voltage (I-V) measurement under laser illumination at multiple power levels, and the results are fitted using 3D device simulations. When considering multiple laser power levels, it is found that material parameters that limit the performance of the photodiode can be extracted through fitting of a small voltage region of the I-V measurement.
ISSN:2158-3242
DOI:10.1109/NUSOD.2018.8570234