Monte Carlo modeling of high field carrier transport in bulk InP

A full band Monte Carlo model is developed to simulate high field carrier transport in bulk InP. The realistic energy band structure used in this model is generated from the local empirical pseudopotential method. The simulated steady-state mean drift velocity and mean energy of electrons and holes...

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Bibliographic Details
Published in2000 IEEE International Conference on Semiconductor Electronics Proceedings pp. 168 - 172
Main Authors You, A.H., Ong, D.S.
Format Conference Proceeding
LanguageEnglish
Published IEEE 2000
Subjects
Absorption
Charge carrier processes
Electron mobility
Impact ionization
Indium phosphide
Monte Carlo methods
Photodetectors
Photonic band gap
Power engineering and energy
Steady-state
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Summary:A full band Monte Carlo model is developed to simulate high field carrier transport in bulk InP. The realistic energy band structure used in this model is generated from the local empirical pseudopotential method. The simulated steady-state mean drift velocity and mean energy of electrons and holes as a function of electric fields are consistent with previous reported results. In our model, the electron and hole ionization coefficients are fitted to the available experimental data in the electric field range from 400 kV/cm to 900 kV/cm by a 'softer' threshold than the Keldysh model used in other full band Monte Carlo models described in the literature.
ISBN:9780780364301
0780364309
DOI:10.1109/SMELEC.2000.932457