The nature of high-temperature instability in fully depleted SOI IM n-MOSFETs

A high-temperature drain current "jump" in fully depleted SOI n-channel MOSFET is reported for the first time. The phenomenon appears in SIMOX SOI MOSFETs at temperatures above 200/spl deg/C. After a negative voltage has been applied to the substrate. A direct link of the current "jum...

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Bibliographic Details
Published in1998 Fourth International High Temperature Electronics Conference. HITEC (Cat. No.98EX145) pp. 226 - 229
Main Authors Nazarov, A.N., Barchuk, I.P., Colinge, J.-P.
Format Conference Proceeding
LanguageEnglish
Published IEEE 1998
Subjects
Current measurement
Electrons
MOSFET circuits
Physics computing
Shape
Silicon
Substrates
Temperature dependence
Temperature measurement
Threshold voltage
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Summary:A high-temperature drain current "jump" in fully depleted SOI n-channel MOSFET is reported for the first time. The phenomenon appears in SIMOX SOI MOSFETs at temperatures above 200/spl deg/C. After a negative voltage has been applied to the substrate. A direct link of the current "jump" with the positive charge formation in the buried oxide (BOX) is demonstrated. The current jump, called "front channel high-temperature kink-effect" is explained by the compensation of positive charges in the (BOX), near the BOX-silicon film interface, by electrons.
ISBN:0780345401
9780780345409
DOI:10.1109/HITEC.1998.676792