Nanoscale elastic imaging: a new metrology tool for low-k dielectric integration

A new characterization tool based on ultrasonic force microscopy (UFM) has been developed to image the nanoscale mechanical properties of metal/low-k polymer damascence test structures. Metal and polymer regions are differentiated on the basis of elastic modulus with a spatial resolution /spl les/10...

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Bibliographic Details
Published inProceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407) pp. 96 - 98
Main Authors Shekhawat, G.S., Kolosov, O.V., Briggs, G.A.D., Shaffer, E.O., Martin, S.J., Geer, R.E.
Format Conference Proceeding
LanguageEnglish
Published IEEE 2000
Subjects
Artificial intelligence
Dielectric constant
Dielectric materials
Integrated circuit interconnections
Metrology
Polymers
Silicon compounds
Surface topography
Testing
Ultrasonic imaging
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Summary:A new characterization tool based on ultrasonic force microscopy (UFM) has been developed to image the nanoscale mechanical properties of metal/low-k polymer damascence test structures. Metal and polymer regions are differentiated on the basis of elastic modulus with a spatial resolution /spl les/10 nm. This technique reveals a RIE-induced hardening of the low-k polymer at the metal/polymer interface and offers new opportunities for metrological reliability evaluation of low-k integration processes.
ISBN:9780780363274
0780363272
DOI:10.1109/IITC.2000.854293