PtTiPtAu and PdTiPtAu ohmic contacts to p-InGaAs

10 nm layers of Pt and Pd were employed as an interlayer between Ti(30 nm)Pt(80 nm)Au(200 nm) metallization and p-InGaAs doped at 1/spl sim/4/spl times/10/sup 19/ cm/sup -3/. For the annealing temperatures of 300-500/spl deg/C, the PtTiPtAu and the PdTiPtAu metallizations exhibited consistently lowe...

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Published inCompound Semiconductors 1997. Proceedings of the IEEE Twenty-Fourth International Symposium on Compound Semiconductors pp. 175 - 178
Main Authors Yu, J.S., Kim, S.H., Kim, T.I.
Format Conference Proceeding
LanguageEnglish
Published IEEE 1997
Subjects
Conductivity
Doping
Indium gallium arsenide
Indium phosphide
Metallization
Ohmic contacts
Optoelectronic devices
Photonic band gap
Rapid thermal annealing
Temperature dependence
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Summary:10 nm layers of Pt and Pd were employed as an interlayer between Ti(30 nm)Pt(80 nm)Au(200 nm) metallization and p-InGaAs doped at 1/spl sim/4/spl times/10/sup 19/ cm/sup -3/. For the annealing temperatures of 300-500/spl deg/C, the PtTiPtAu and the PdTiPtAu metallizations exhibited consistently lower contact resistivities than the TiPtAu metallization. The effective barrier height of the PtTiPtAu contacts (0.16 eV) was estimated to be lower than those of the PdTiPtAu contacts (0.14 eV) and the TiPtAu contacts (0.16 eV). The high work function Pt lowered the barrier height. The Pd, on the other hand, formed a favorable interfacial compound when as-deposited, thereby reducing the contact resistivity.
ISBN:9780750305563
0750305568
DOI:10.1109/ISCS.1998.711608