An analytical transit time model for short channel MOSFET's

An analytical transit time model for short channel MOSFETs is presented. Several second order effects such as short channel and narrow width effects, mobility degradation, parasitic drain and source resistance, velocity saturation and channel length modulation are included in the model. The model sh...

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Bibliographic Details
Published in2000 IEEE International Conference on Semiconductor Electronics Proceedings pp. 72 - 75
Main Author Kasemsuwan, V.
Format Conference Proceeding
LanguageEnglish
Published IEEE 2000
Subjects
Analytical models
Cutoff frequency
Degradation
Electric resistance
Microprocessors
MOSFET circuits
Numerical simulation
Poisson equations
Predictive models
Voltage
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Summary:An analytical transit time model for short channel MOSFETs is presented. Several second order effects such as short channel and narrow width effects, mobility degradation, parasitic drain and source resistance, velocity saturation and channel length modulation are included in the model. The model shows good agreements with experimental and two dimensional numerical data over a wide range of biasing conditions.
ISBN:9780780364301
0780364309
DOI:10.1109/SMELEC.2000.932436