Determination of implanted layer depth in silicon by electrochemical C-V technique

A method for determining the carrier concentration profile N(x) and the depth of p/sup +/-n junction boron implanted silicon using the electrochemicaI capacitance-voltage method, and EBIC (electron beam induced current) is presented. The above mentioned methods were found to be suitable for characte...

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Bibliographic Details
Published inASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386) pp. 315 - 318
Main Authors Hulenyi, L., Kinder, R., Satka, A.
Format Conference Proceeding
LanguageEnglish
Published IEEE 2000
Subjects
Admittance
Capacitance
Capacitance-voltage characteristics
Electrical resistance measurement
Electron beams
Permittivity
Semiconductor materials
Silicon
Strontium
Voltage
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Summary:A method for determining the carrier concentration profile N(x) and the depth of p/sup +/-n junction boron implanted silicon using the electrochemicaI capacitance-voltage method, and EBIC (electron beam induced current) is presented. The above mentioned methods were found to be suitable for characterizing the implantation process. Experimental results have been compared with theoretical ones based on Gauss N/sub G/(x) and Pearson IV Np(X) distributions and with those obtained by means of EBIC.
ISBN:9780780359390
0780359399
DOI:10.1109/ASDAM.2000.889509