Effect of rapid thermal annealing on electron emission and DX centers in strained InGaAs/GaAs single quantum well laser diodes

Thermal processing of strained In/sub 0.2/Ga/sub 0.8/As/GaAs graded-index separate confinement heterostructure single quantum well laser diodes grown by molecular beam epitaxy is investigated. It was found that rapid thermal annealing can improve the 77 K photoluminescence efficiency and electron em...

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Bibliographic Details
Published in2000 International Semiconducting and Insulating Materials Conference. SIMC-XI (Cat. No.00CH37046) pp. 341 - 344
Main Authors Liwu Lu, Yanhua Zhang, Zuntu Xu, Zhongying Xu, Zhanguo Wang, Wang, J., Weikun Ge
Format Conference Proceeding
LanguageEnglish
Published IEEE 2000
Subjects
Atomic beams
Diode lasers
Electron emission
Gallium arsenide
Indium gallium arsenide
Molecular beam epitaxial growth
Photoluminescence
Potential well
Rapid thermal annealing
Rapid thermal processing
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Summary:Thermal processing of strained In/sub 0.2/Ga/sub 0.8/As/GaAs graded-index separate confinement heterostructure single quantum well laser diodes grown by molecular beam epitaxy is investigated. It was found that rapid thermal annealing can improve the 77 K photoluminescence efficiency and electron emission from the active layer, due to removal of nonradiative centers from the InGaAs/GaAs interface. Because of the interdiffusion of Al and Ga atoms, rapid thermal annealing increases simultaneously the density of DX centers in the AlGaAs graded layer. The current stressing experiments of post-growth and annealed laser diodes are indicative of a corresponding increase in the concentration of DX centers, suggesting that DX centers may be responsible for the degradation of laser diode performance.
ISBN:9780780358140
0780358147
DOI:10.1109/SIM.2000.939257