Polysilicon diodes as temperature sensors for chemical microreaction systems

Lateral polysilicon P/sup +/-N-N/sup +/ and P/sup +/-P-N/sup +/ diodes were fabricated and their electrical properties such as ON current, reverse current and series resistance were studied at various temperatures in the range of 50/spl deg/C to 150/spl deg/C. It was found that both reverse and forw...

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Bibliographic Details
Published in2001 International Semiconductor Device Research Symposium. Symposium Proceedings (Cat. No.01EX497) pp. 174 - 177
Main Authors Karnik, S.V., Vo, H.X., Hatalis, M.K., Kothare, M.V.
Format Conference Proceeding
LanguageEnglish
Published IEEE 2001
Subjects
Active matrix organic light emitting diodes
Chemical sensors
Conducting materials
Infrared image sensors
Micromechanical devices
Semiconductor diodes
Silicon
Substrates
Temperature sensors
Thermal conductivity
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Summary:Lateral polysilicon P/sup +/-N-N/sup +/ and P/sup +/-P-N/sup +/ diodes were fabricated and their electrical properties such as ON current, reverse current and series resistance were studied at various temperatures in the range of 50/spl deg/C to 150/spl deg/C. It was found that both reverse and forward currents of the diodes increased with the temperature. Using these electrical properties as parameters, the lateral polysilicon diodes can be used as temperature sensors in microreaction systems.
ISBN:9780780374324
0780374320
DOI:10.1109/ISDRS.2001.984468