New IEGT device for a klystron anode modulator switch

To replace vacuum tubes in klystron anode modulators with a semiconductor switch, we have developed a one chip IEGT (injection enhanced gate transistor) module. IEGT is a new semiconductor device which was originally invented by Toshiba. Based on the electron injection enhancement effects, IEGT has...

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Bibliographic Details
Published inProceedings IPEMC 2000. Third International Power Electronics and Motion Control Conference (IEEE Cat. No.00EX435) Vol. 1; pp. 390 - 395 vol.1
Main Authors Fujiwara, T., Okamura, K., Sakai, T., Nishine, K.
Format Conference Proceeding
LanguageEnglish
Published IEEE 2000
Subjects
Anodes
Electron tubes
FETs
Insulated gate bipolar transistors
Klystrons
Power semiconductor switches
Pulse transformers
Pulse width modulation
Space vector pulse width modulation
Voltage
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Summary:To replace vacuum tubes in klystron anode modulators with a semiconductor switch, we have developed a one chip IEGT (injection enhanced gate transistor) module. IEGT is a new semiconductor device which was originally invented by Toshiba. Based on the electron injection enhancement effects, IEGT has excellent characteristics, high blocking voltage capability of 4.5 kV and fast switching performance. This IEGT module is one of the most likely candidates for the semiconductor switch. For the next step, we are planning to start to develop a 100 kV IEGT switch for a klystron anode modulator.
ISBN:780003464X
9787800034640
DOI:10.1109/IPEMC.2000.885435