Growth and quality control of MBE SiGe-HBT structures for analog IC applications

• Published in: 2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443) Vol. 1; pp. 586 - 591 vol.1
• Main Authors: Kaicheng Li, Daoguang Liu, Wei-Xin Ni, Yue Hao, Jing Zhang, Zhengfan Zhang, Shiliu Xu, Gangyi Hu, Lin Guo
• Format: Conference Proceeding
• Language: English
• Published: IEEE 2001
• Subjects: Analog integrated circuits; Application specific integrated circuits; Bipolar integrated circuits; Cutoff frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Molecular beam epitaxial growth; Quality control; Silicon germanium; X-ray diffraction
• ISBN: 0780365208; 9780780365209
• DOI: 10.1109/ICSICT.2001.981547

MBE-based SiGe/Si heterostructures prepared by molecular beam epitaxy (MBE) are described in this study with an aim at manufacturing SiGe heterojunction bipolar transistors (HBTs) for the applications in analog ICs. Based on the simulations made by Medici, MBE-based SiGe/Si heterostructures have been designed and grown. The quality of the MBE layered heterostructures has been characterized by reflection high-energy electron diffraction, X-ray diffraction, secondary ion mass spectrometry and spreading resistance. Furthermore, SiGe-HBTs have been fabricated using the 3 /spl mu/m process technology. The experimental results indicate that both the direct current (DC) characteristics and the cutoff frequency of SiGe HBTs are satisfactory. The current gain /spl beta/ of HBT devices is 50, when the collector voltage V/sub C/=2 V and the collector current I/sub C/=5 mA. The cutoff frequency f/sub T/=5.1 GHz. And the uniformity of the cutoff frequency of HBT is quite good. The Gummel plot of an MBE-grown SiGe HBT with the common-emitter configuration shows the excellent performance.