Non-radiative polaritons in GaAs/AlGaAs heterostructures under quantum Hall effect conditions

• Published in: Third International Kharkov Symposium 'Physics and Engineering of Millimeter and Submillimeter Waves'. MSMW'98. Symposium Proceedings (Cat. No.98EX119) Vol. 1; pp. 292 - 294 vol.1
• Main Authors: Beletskii, N.N., Borisenko, I.A.
• Format: Conference Proceeding
• Language: English
• Published: IEEE 1998
• Subjects: Conductivity; Dielectric constant; Dielectric substrates; Electromagnetic fields; Electromagnetic propagation; Electrons; Gallium arsenide; Hall effect; Heterojunctions; Tensile stress
• ISBN: 9780780355538; 0780355539
• DOI: 10.1109/MSMW.1998.758985

We investigate the nonradiative polaritons in real GaAs/Al/sub x/Ga/sub 1-x/As heterojunctions under integer quantum Hall effect conditions. The influence of Al/sub x/Ga/sub 1-x/As layer thickness and the degree of energy dissipation in 2DES over the existence conditions, the spectrum and damping of nonradiative polaritons are investigated. It is shown that in addition to surface polaritons (SP), which are localized at the GaAs/Al/sub x/Ga/sub 1-x/As boundary, another type of SP can exist in the heterojunction, localized at the Al/sub x/Ga/sub 1-x/As-vacuum/air boundary (Brewster's modes). It is found that in addition to these two types of SP, bulk polaritons of various orders can propagate in the heterojunction, which possess one or several maximums of energy flow in the Al/sub x/Ga/sub 1-x/As layer. It is pointed out that under IQHE conditions all the characteristics of surface and bulk polaritons are quantized. It is determined that if the wave number changes, surface and bulk polaritons can continuously transform one into another.