Lateral growth of silicon films from metal solutions [for solar cells]

A new LPE technique to prepare crystalline Si film solar cells laterally on nonSi substrate was examined. The lateral growth is expected to occur continuously by shifting a temperature gradient zone formed on the substrate. Steady-state distribution of the Si film thickness and Si concentration in t...

Full description

Saved in:
Bibliographic Details
Published inConference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036) pp. 229 - 232
Main Authors Kita, K., Ching-Ju Wen, Otomo, J., Yamada, K., Komiyama, H., Takahashi, H.
Format Conference Proceeding
LanguageEnglish
Published IEEE 2000
Subjects
Copper
Costs
Crystalline materials
Crystallization
Semiconductor films
Silicon
Solvents
Steady-state
Substrates
Temperature
Online AccessGet full text

Cover

More Information
Summary:A new LPE technique to prepare crystalline Si film solar cells laterally on nonSi substrate was examined. The lateral growth is expected to occur continuously by shifting a temperature gradient zone formed on the substrate. Steady-state distribution of the Si film thickness and Si concentration in the solution were estimated by the calculation assuming diffusion controlled growth. The Si film grown laterally from Si-Cu solution in the experiment showed the orientation agreed with the face direction of the seed crystal. This fact strongly suggested the crucial role of the seed crystal in the growth mechanism.
ISBN:0780357728
9780780357723
ISSN:0160-8371
DOI:10.1109/PVSC.2000.915798