Critical dimension issues for 200 mm electron projection masks

Electron projection lithography (EPL) is one possible successor to conventional optical lithography. One type of EPL mask, namely a SCALPEL mask, consists of a large array of rectangular membranes on a 200 mm silicon support wafer. An image of a die is formed by scanning and stitching the patterns r...

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Published inDigest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387) pp. 120 - 121
Main Authors Resnick, D.J., Nordquist, K., Dauksher, W.J., Ainley, E., Lu, B., Mangat, P., Weisbrod, E., Martin, C., Wei, A., Englestad, R., Lovell, E., Ivin, V.
Format Conference Proceeding
LanguageEnglish
Published IEEE 2000
Subjects
Biomembranes
Chromium
Electrons
Etching
Laboratories
Lithography
Optical scattering
Resists
Silicon
Temperature
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Summary:Electron projection lithography (EPL) is one possible successor to conventional optical lithography. One type of EPL mask, namely a SCALPEL mask, consists of a large array of rectangular membranes on a 200 mm silicon support wafer. An image of a die is formed by scanning and stitching the patterns resident on the membrane array. Mask CD uniformity must be addressed for a single membrane and for the entire array. Key areas of concern include temperature uniformity during the resist post exposure bake process, heating issues during resist exposure, fogging effects caused by electron scattering from the mask chuck and biasing resulting from the pattern transfer of the mask scattering layer. The purpose of this paper is to address these issues.
ISBN:9784891140045
4891140046
DOI:10.1109/IMNC.2000.872652