The influence of the electrolyte-semiconductor interface on the doping profile measurement of a GaAs structure

The electrical behavior of the 0.1 M Tiron electrolyte-GaAs interface has been investigated. Attention is centred upon the properties of the electrolyte-GaAs interface and its influence on the capacitance-voltage measurements. Electrical properties of the interface were measured by electrochemical C...

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Bibliographic Details
Published inASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386) pp. 335 - 338
Main Authors Kinder, R., Paszkiewicz, B., Sciana, B., Huleny, L.
Format Conference Proceeding
LanguageEnglish
Published IEEE 2000
Subjects
Capacitance
Capacitance-voltage characteristics
Doping profiles
Electric variables measurement
Electrical resistance measurement
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Frequency measurement
Gallium arsenide
Impedance measurement
Thyristors
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Summary:The electrical behavior of the 0.1 M Tiron electrolyte-GaAs interface has been investigated. Attention is centred upon the properties of the electrolyte-GaAs interface and its influence on the capacitance-voltage measurements. Electrical properties of the interface were measured by electrochemical C-V techniques and impedance spectroscopy.
ISBN:9780780359390
0780359399
DOI:10.1109/ASDAM.2000.889514