First real-time true wafer temperature and growth rate measurements in a closed-coupled showerhead MOVPE reactor during growth of InGa(AsP)

In this paper, we report on an optical in-situ study using a novel in-situ sensor to measure the true wafer temperature and reflectance in a Thomas Swan closed-coupled shower head reactor. Measurements have been performed during growth of InGaAs and InGaAsP on InP. By means of emissivity corrected p...

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Bibliographic Details
Published inInternational Conference onIndium Phosphide and Related Materials, 2003 pp. 44 - 47
Main Authors Haberland, K., Mullins, J.T., Schenk, T., Trepk, T., Considine, L., Pakes, A., Taylor, A., Zettler, J.-T.
Format Conference Proceeding
LanguageEnglish
Published IEEE 2003
Subjects
Epitaxial growth
Epitaxial layers
Indium gallium arsenide
Indium phosphide
Inductors
Optical sensors
Performance evaluation
Reflectivity
Temperature sensors
Wavelength measurement
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Summary:In this paper, we report on an optical in-situ study using a novel in-situ sensor to measure the true wafer temperature and reflectance in a Thomas Swan closed-coupled shower head reactor. Measurements have been performed during growth of InGaAs and InGaAsP on InP. By means of emissivity corrected pyrometry the true wafer temperature is directly accessible in real-time. Simultaneous reflectance measurements have been utilized for precise growth rate measurements. The measurements have been made in a wafer selective manner allowing run-to-run variations to be tracked, and comparisons between wafers to be made. The effect of changes in growth temperature, (e.g. due to different coatings of the susceptor, or after changing a susceptor), on the emission wavelength of the quaternary InGaAsP has been studied.
ISBN:0780377044
9780780377042
DOI:10.1109/ICIPRM.2003.1205308