Low-Tc three-terminal structures for new superconducting devices

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Bibliographic Details
Published inSuperconductor science & technology Vol. 14; no. 12; pp. 987 - 993
Main Authors Pepe, G P, Scaldaferri, R, Parlato, L, Peluso, G, Granata, C, Russo, M, Rotoli, G, Booth, N E
Format Journal Article Conference Proceeding
LanguageEnglish
Published Bristol IOP Publishing 01.12.2001
Institute of Physics
Subjects
Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Superconducting devices
Density of states
Non equilibrium conditions
Cooper pair
Multiple layer
Proximity effect
Numerical simulation
Transistor
Tunnel junction
Superconductor device
Sine Gordon equation
Bistability
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ISSN:0953-2048
1361-6668
DOI:10.1088/0953-2048/14/12/301