A novel high-performance WSi-gate self-aligned N-AlGaAs/InGaAs/N-AlGaAs pseudomorphic double heterojunction MODFET by ion implantation

A novel high performance WSi-gate self-aligned N-AlGaAs/InGaAs/N-AlGaAs pseudomorphic double heterojunction MODFET was fabricated by ion implantation into the epitaxial layers. To obtain high activation for the Si implanted epitaxial layers, we have optimized the layer structure, especially AlGaAs t...

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Published inCompound Semiconductors 1997. Proceedings of the IEEE Twenty-Fourth International Symposium on Compound Semiconductors pp. 487 - 490
Main Authors Nishii, K., Nishitsuji, M., Uda, T., Yokoyama, T., Yamamoto, S., Kunihisa, T., Tamura, A.
Format Conference Proceeding
LanguageEnglish
Published IEEE 1997
Subjects
Epitaxial layers
Gallium arsenide
HEMTs
Heterojunctions
Indium gallium arsenide
Ion implantation
MMICs
MODFETs
Rapid thermal annealing
Temperature dependence
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Summary:A novel high performance WSi-gate self-aligned N-AlGaAs/InGaAs/N-AlGaAs pseudomorphic double heterojunction MODFET was fabricated by ion implantation into the epitaxial layers. To obtain high activation for the Si implanted epitaxial layers, we have optimized the layer structure, especially AlGaAs thickness, and annealing conditions using a graphite heater. The 0.8 /spl mu/m-gate DH-MODFET exhibited a K-value of 400 mS/Vmm, gm/sub MAX/ of 450 mS/mm and I/sub MAX/ of 300 mA/mm with Vth of -0.05 V. The standard deviation of Vth was 18.1 mV across a 3 inch wafer. Operated with drain bias of 3.0 V, the DH-MODFET demonstrated 28% power added efficiency (PAE) with -56.4 dBc adjacent channel leakage power ratio (ACPR) at P/sub out/=21.5 dBm and 600 kHz off center frequency from 1.9 GHz.
ISBN:9780750305563
0750305568
DOI:10.1109/ISCS.1998.711721