A mixed Si and GaAs chip set for millimeter-wave automotive radar front-ends

A chip set consisting of three GaAs HEMT MMICs (voltage-controlled oscillator, medium power amplifier, subharmonic mixer) and a discrete Si Schottky mixer diode has been developed for 77 GHz automotive radar systems. It facilitates the realization of a high performance millimeter-wave radar front-en...

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Bibliographic Details
Published in2000 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium Digest of Papers (Cat. No.00CH37096) pp. 191 - 194
Main Authors Siweris, H.J., Werthof, A., Tischer, H., Grave, T., Werthmann, H., Rasshofer, R.H., Kellner, W.
Format Conference Proceeding
LanguageEnglish
Published IEEE 2000
Subjects
Automotive engineering
Costs
Gallium arsenide
HEMTs
Millimeter wave radar
MMICs
Power amplifiers
Production
Schottky diodes
Voltage-controlled oscillators
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Summary:A chip set consisting of three GaAs HEMT MMICs (voltage-controlled oscillator, medium power amplifier, subharmonic mixer) and a discrete Si Schottky mixer diode has been developed for 77 GHz automotive radar systems. It facilitates the realization of a high performance millimeter-wave radar front-end with a minimum amount of chip area and, consequently, low production costs.
ISBN:0780362802
9780780362802
ISSN:1529-2517
2375-0995
DOI:10.1109/RFIC.2000.854446