Ultrahigh-speed InGaP/AlGaAs/InGaAs HBTs using Mg as the base dopant

We have fabricated ultrahigh-speed InGaP/AlGaAs/InGaAs graded-base hetero-bipolar transistors (HBTs), which employ Mg as the base-region p-type dopant. In addition, the dead region under the base metal contact layer has been etched away. Even with a HBT base layer as thick as 60 nm, we obtained exce...

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Bibliographic Details
Published inConference Proceedings. 1997 International Conference on Indium Phosphide and Related Materials pp. 58 - 61
Main Authors Kobayashi, S., Fujita, T., Yakihara, T., Oka, S., Miura, A.
Format Conference Proceeding
LanguageEnglish
Published IEEE 1997
Subjects
Etching
Fabrication
Frequency conversion
Gallium arsenide
Heterojunction bipolar transistors
Indium gallium arsenide
Oscillators
Parasitic capacitance
Prototypes
Solid state circuits
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Summary:We have fabricated ultrahigh-speed InGaP/AlGaAs/InGaAs graded-base hetero-bipolar transistors (HBTs), which employ Mg as the base-region p-type dopant. In addition, the dead region under the base metal contact layer has been etched away. Even with a HBT base layer as thick as 60 nm, we obtained excellent frequency characteristics of the short-circuit current-gain frequency ft and the maximum frequency of oscillation fmax as high as approximately 140 GHz and 230 GHz, respectively. We obtained maximum toggle frequency of 22.5 GHz and direct oscillation frequency of 80 GHz for the static frequency divider and the base common transistor oscillator, respectively, by using the 4-inch full process of InGaP/AlGaAs/InGaAs graded-base HBT.
ISBN:9780780338982
0780338987
ISSN:1092-8669
DOI:10.1109/ICIPRM.1997.600028