High-frequency time-domain modeling of GaAs FETs using hydrodynamic model coupled with Maxwell's equations

• Published in: 1994 IEEE MTT-S International Microwave Symposium Digest (Cat. No.94CH3389-4) pp. 397 - 400 vol.1
• Main Authors: Alsunaidi, M.A., El-Ghazaly, S.M.
• Format: Conference Proceeding
• Language: English
• Published: IEEE 1994
• Subjects: Electromagnetic coupling; Electromagnetic modeling; Electrons; Gallium arsenide; Hydrodynamics; Maxwell equations; Microwave FETs; Solid modeling; Solid state circuits; Time domain analysis
• ISBN: 0780317785; 9780780317789
• ISSN: 0149-645X; 2576-7216
• DOI: 10.1109/MWSYM.1994.335416

A high frequency full wave model for microwave and millimeter wave GaAs Field Transistors (FET) is presented. The consists of two coupled models for the solid-state and electromagnetic parts of the problem. In the solid-state part, a hydrodynamic model consisting of the conservation equations for carrier density, energy, and momentum is utilized. All the conservation equations are solved with minimum simplifications. On the electromagnetic side, a 3D model consisting of Maxwell's equations is used. The time domain simulation of the device is performed using finite difference method. Numerical results of the presented model for a 0.5 /spl mu/m MESFET show that wave effect plays a crucial role in modulating fields and electron velocities inside the active device. The wave propagation is detected and found to cause considerable variations in field distribution and electron velocities.< >