A novel poly-silicon-capped poly-silicon-germanium thin-film transistor

Poly-silicon-capped (poly-Si-capped) polysilicon-germanium (poly-Si/sub 1-x/Ge/sub x/) thin-film transistors (TFTs) have been designed and fabricated with the aim to improve performance of load devices in high-density mega-bit SRAM cells. Poly-Si-capped poly-Si/sub 1-x/Ge/sub x/ TFTs utilize the exc...

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Bibliographic Details
Published inProceedings of International Electron Devices Meeting pp. 513 - 516
Main Authors Tang, A.J., Tsai, J.A., Reif, R., Tsu-Jae King
Format Conference Proceeding
LanguageEnglish
Published IEEE 1995
Subjects
Amorphous materials
Chemical vapor deposition
Intrusion detection
Laboratories
Leakage current
Plasma temperature
Random access memory
SRAM chips
Substrates
Thin film transistors
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Summary:Poly-silicon-capped (poly-Si-capped) polysilicon-germanium (poly-Si/sub 1-x/Ge/sub x/) thin-film transistors (TFTs) have been designed and fabricated with the aim to improve performance of load devices in high-density mega-bit SRAM cells. Poly-Si-capped poly-Si/sub 1-x/Ge/sub x/ TFTs utilize the excellent interface between oxide and poly-Si interface as well as the higher mobilities of poly-Si/sub 1-x/Ge/sub x/. P-channel poly-Si-capped poly-Si/sub 1-x/Ge/sub x/ TFTs show superior device results compared to similarly-processed poly-Si TFTs.
ISBN:0780327004
9780780327009
ISSN:0163-1918
2156-017X
DOI:10.1109/IEDM.1995.499250