Surface acoustic wave propagation properties of 3C-SiC epitaxial films on Si(100)

3C-SiC epitaxial films on Si(100) were successfully grown by MOCVD using BTMSM source. The FWHM of 3C-SiC (200) peak was obtained 0.37 degree. Using ZnO piezoelectric thin films, the SAW propagation properties of 3C-SiC thin films on Si(100) have been experimentally and theoretically investigated. T...

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Published in1999 IEEE Ultrasonics Symposium. Proceedings. International Symposium (Cat. No.99CH37027) Vol. 1; pp. 273 - 276 vol.1
Main Authors Jin Yong Kim, Hoon Joo Na, Hyeong Joon Kim
Format Conference Proceeding
LanguageEnglish
Published IEEE 1999
Subjects
Acoustic propagation
Acoustic waves
Frequency
Piezoelectric films
SAW filters
Semiconductor thin films
Substrates
Surface acoustic wave devices
Surface acoustic waves
Zinc oxide
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Summary:3C-SiC epitaxial films on Si(100) were successfully grown by MOCVD using BTMSM source. The FWHM of 3C-SiC (200) peak was obtained 0.37 degree. Using ZnO piezoelectric thin films, the SAW propagation properties of 3C-SiC thin films on Si(100) have been experimentally and theoretically investigated. The hard 3C-SiC thin films stiffened the Si substrate so that the velocities of fundamental and 1 st modes increased up to 5,100 m/s and 9,140 m/s, respectively.
ISBN:0780357221
9780780357228
ISSN:1051-0117
DOI:10.1109/ULTSYM.1999.849401