Waveguide AlInAs/AlGaInAs avalanche photodiode for 20 Gbit/s photoreceivers

High speed photodetectors are needed in optical communication systems and avalanche photodiodes are essential in highly sensitive photoreceivers at the 1.55 /spl mu/m wavelength. Avalanche photodiodes (APDs), when compared to PIN photodiodes, provide higher responsivities due to their internal gain...

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Published inConference Proceedings. 1997 International Conference on Indium Phosphide and Related Materials pp. 486 - 489
Main Authors Cohen-Jonathan, C., Giraudet, L., Praseuth, J.P., Legros, E., Heliot, F., Bonzo, A.
Format Conference Proceeding
LanguageEnglish
Published IEEE 1997
Subjects
Absorption
Avalanche photodiodes
Bandwidth
Buffer layers
Frequency response
Indium gallium arsenide
Optical beams
Optical buffering
Optical refraction
Optical waveguides
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Summary:High speed photodetectors are needed in optical communication systems and avalanche photodiodes are essential in highly sensitive photoreceivers at the 1.55 /spl mu/m wavelength. Avalanche photodiodes (APDs), when compared to PIN photodiodes, provide higher responsivities due to their internal gain M. An improvement in the signal to noise ratio of about 10 dB is expected at 20 Gbit/s. Very good performances have already been demonstrated at 10 Gbit/s. For higher bit-rates, a side-illuminated structure has been proposed, to reach simultaneously high responsivity and high speed. The simulations allowing to design waveguide APD structures, their fabrication and their characteristics are reported in this paper.
ISBN:9780780338982
0780338987
ISSN:1092-8669
DOI:10.1109/ICIPRM.1997.600201