An integrated approach for accurate simulation and modeling of the silicide-source/drain structure and the silicide-diffusion contact resistance

We present the first integrated simulation and modeling approach for the silicide-source/drain structure, and for the silicide-diffusion contact resistance; thus, providing the critical link between electrical performance and the processing/structural variables forming the silicide source/drain regi...

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Bibliographic Details
Published inInternational Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217) pp. 729 - 732
Main Authors Apte, P.P., Potla, S., Prinslow, D.A., Pollack, G., Scott, D., Varahramyan, K.
Format Conference Proceeding
LanguageEnglish
Published IEEE 1998
Subjects
Calibration
Contact resistance
Electric variables measurement
MOSFETs
Semiconductor device modeling
Silicides
Thickness measurement
Threshold voltage
Tin
Transistors
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Summary:We present the first integrated simulation and modeling approach for the silicide-source/drain structure, and for the silicide-diffusion contact resistance; thus, providing the critical link between electrical performance and the processing/structural variables forming the silicide source/drain region. We apply this approach to predict the silicide-diffusion contact resistance accurately, and to improve transistor performance significantly.
ISBN:0780347749
9780780347748
ISSN:0163-1918
2156-017X
DOI:10.1109/IEDM.1998.746460