Observation of extremely large sheet hole densities in uncapped undoped AlSb layers

In this paper, we present a study of the electrical and physical properties of uncapped AlSb, grown by molecular beam epitaxy. Large concentrations of oxygen have been observed in the uncapped undoped AlSb layers, resulting in extremely large sheet hole densities (as high as 3/spl times/10/sup 15/ c...

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Published inProceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits pp. 203 - 211
Main Authors Tadayon, B., Kyono, C.S., Godbey, D.J., Tadayon, S., Mittereder, J.A.
Format Conference Proceeding
LanguageEnglish
Published IEEE 1993
Subjects
Chemicals
Gallium arsenide
Heterojunctions
Laboratories
Molecular beam epitaxial growth
Plasma measurements
Spectroscopy
Substrates
Surface cleaning
Wet etching
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Summary:In this paper, we present a study of the electrical and physical properties of uncapped AlSb, grown by molecular beam epitaxy. Large concentrations of oxygen have been observed in the uncapped undoped AlSb layers, resulting in extremely large sheet hole densities (as high as 3/spl times/10/sup 15/ cm/sup -2/ with the corresponding mobilities of about 60 cm/sup 2/V/sup -1/s/sup -1/). However, for the AlSb layers capped with 50 /spl Aring/ of GaSb, oxygen does not penetrate beyond the GaSb cap layer, and the underlying AlSb layer is highly resistive. X-ray photoelectron spectroscopy (XPS) has been used to analyze the surface oxides for the uncapped AlSb layers. Three different oxides have been observed on the surface of the uncapped layers: Al/sub 2/O/sub 3/, Sb/sub 2/O/sub 5/, and Sb/sub 2/O/sub 3/.< >
ISBN:0780308948
9780780308947
DOI:10.1109/CORNEL.1993.303088