Control of multiple bandgap shifts in InGaAs-AlInGaAs multiple-quantum-well material using different thicknesses of PECVD SiO2 protection layers

A useful development of the sputtered SiO/sub 2/ intermixing technique is reported, which uses a single stage of sputtered SiO/sub 2/ deposition and annealing to achieve precise tuning of the bandgap energy in the InGaAs-AlInGaAs material system. The blue shift of photoluminescence spectra can be va...

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Bibliographic Details
Published inIEEE photonics technology letters Vol. 12; no. 9; pp. 1141 - 1143
Main Authors Liu, X.F., Qiu, B.C., Ke, M.L., Bryce, A.C., Marsh, J.H.
Format Journal Article
LanguageEnglish
Published IEEE 01.09.2000
Subjects
Absorption
Annealing
Laser tuning
Optical materials
Optical waveguides
Photoluminescence
Photonic band gap
Quantum well devices
Quantum well lasers
Semiconductor materials
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Summary:A useful development of the sputtered SiO/sub 2/ intermixing technique is reported, which uses a single stage of sputtered SiO/sub 2/ deposition and annealing to achieve precise tuning of the bandgap energy in the InGaAs-AlInGaAs material system. The blue shift of photoluminescence spectra can be varied in the range of 0-160 nm. Bandgap-tuned lasers were integrated on a single chip using this technique to assess the post-processed material characteristics and demonstrate its application in optoelectronic integration.
ISSN:1041-1135
1941-0174
DOI:10.1109/68.874215