Device drive current degradation observed with retrograde channel profiles

Super steep retrograde channel profiles have been widely known to produce improved short channel characteristics in sub-0.35 /spl mu/m CMOS technologies. In this paper, an attempt is made to leverage this improved short channel behaviour and thereby improve transistor performance (as measured by the...

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Bibliographic Details
Published inProceedings of International Electron Devices Meeting pp. 419 - 422
Main Authors Venkatesan, S., Lutze, J.W., Lage, C., Taylor, W.J.
Format Conference Proceeding
LanguageEnglish
Published IEEE 1995
Subjects
Annealing
Degradation
Doping profiles
Indium
Laboratories
Length measurement
MOS devices
Performance evaluation
Research and development
Threshold voltage
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Summary:Super steep retrograde channel profiles have been widely known to produce improved short channel characteristics in sub-0.35 /spl mu/m CMOS technologies. In this paper, an attempt is made to leverage this improved short channel behaviour and thereby improve transistor performance (as measured by the current drive). Whereas significant improvements in short channel effects measured by DIBL and /spl Delta/Vt/sub sat/ are obtained with retrograde channels, it is observed that for a fixed gate length and equal threshold voltage, transistors with retrograde channel profiles typically exhibit lower drive currents than equivalent transistors fabricated with conventional doping profiles. Potential trade offs in device design resulting from this observation are discussed.
ISBN:0780327004
9780780327009
ISSN:0163-1918
2156-017X
DOI:10.1109/IEDM.1995.499228