Low damage reactive ion etching process for fabrication of ridge waveguide lasers

The damage produced during CH/sub 4//H/sub 2/ reactive ion etching (RIE) processes has been measured using low temperature photoluminescence. The damage depth profile was estimated and a low level damage RIE process has been developed. The process has been used to fabricate InGaAs/InGaAsP ridge wave...

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Bibliographic Details
Published inConference Proceedings. 1997 International Conference on Indium Phosphide and Related Materials pp. 578 - 581
Main Authors Qiu, B.C., Ooi, B.S., Bryce, A.C., Hicks, S.E., Wilkinson, C.D.W., De La Rue, N.M., Marsh, J.H.
Format Conference Proceeding
LanguageEnglish
Published IEEE 1997
Subjects
Chemical lasers
Dry etching
Hydrogen
Optical device fabrication
Optical waveguides
Optoelectronic devices
Photoluminescence
Plasma measurements
Waveguide lasers
Wet etching
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Summary:The damage produced during CH/sub 4//H/sub 2/ reactive ion etching (RIE) processes has been measured using low temperature photoluminescence. The damage depth profile was estimated and a low level damage RIE process has been developed. The process has been used to fabricate InGaAs/InGaAsP ridge waveguide lasers containing 5 quantum wells with threshold currents, 43-45 mA for 500 /spl mu/m lasers, that are indistinguishable from those of wet-etched devices.
ISBN:9780780338982
0780338987
ISSN:1092-8669
DOI:10.1109/ICIPRM.1997.600232