A Novel High-Endurance FeFET Memory Device Based on ZrO2 Anti-Ferroelectric and IGZO Channel

We successfully developed a high-performance FeFET memory device by integrating ZrO 2 anti-ferroelectric with IGZO channel for the first time. The replacement of conventional HfO 2 ferroelectric by anti-ferroelectric ZrO 2 effectively reduces the coercive field and boosts endurance. Furthermore, the...

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Bibliographic Details
Published in2021 IEEE International Electron Devices Meeting (IEDM) pp. 17.3.1 - 17.3.4
Main Authors Liang, Zhongxin, Tang, Kechao, Dong, Junchen, Li, Qijun, Zhou, Yuejia, Zhu, Runteng, Wu, Yanqing, Han, Dedong, Huang, Ru
Format Conference Proceeding
LanguageEnglish
Japanese
Published IEEE 11.12.2021
Subjects
Capacitance-voltage characteristics
Crystallization
Current measurement
Electrodes
Logic gates
Nonvolatile memory
Pulse measurements
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Summary:We successfully developed a high-performance FeFET memory device by integrating ZrO 2 anti-ferroelectric with IGZO channel for the first time. The replacement of conventional HfO 2 ferroelectric by anti-ferroelectric ZrO 2 effectively reduces the coercive field and boosts endurance. Furthermore, the IGZO channel allows for an interlayer free gate stack that lowers the working voltage and enhances retention compared to Si channel. The novel FeFET demonstrates a high endurance up to 10 9 cycles, a good retention of > 10 years, and a low working voltage of 2 V, greatly empowering the device for future embedded memory with ultra-low energy consumption.
ISSN:2156-017X
DOI:10.1109/IEDM19574.2021.9720627