Measurement point selection for in-operation wear-out monitoring
In recent IC designs, the risk of early failure due to electromigration wear-out has increased due to reduced feature dimensions. To give a warning of impending failure, wear-out monitoring approaches have included delay measurement circuitry on-chip. Due to the high cost of delay measurement circui...
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Published in | 14th IEEE International Symposium on Design and Diagnostics of Electronic Circuits and Systems pp. 381 - 386 |
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Main Authors | , , |
Format | Conference Proceeding |
Language | English |
Published |
IEEE
01.04.2011
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Subjects | |
Online Access | Get full text |
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Summary: | In recent IC designs, the risk of early failure due to electromigration wear-out has increased due to reduced feature dimensions. To give a warning of impending failure, wear-out monitoring approaches have included delay measurement circuitry on-chip. Due to the high cost of delay measurement circuitry this paper presents a method to reduce the number of necessary measurement points. The proposed method is based on identification of wear-out sensitive interconnects and selects a small number of measurement points that can be used to observe the state of all the wear-out sensitive interconnects. The method is demonstrated on ISCAS85 benchmark ICs with encouraging results. |
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ISBN: | 1424497558 9781424497553 |
DOI: | 10.1109/DDECS.2011.5783115 |