Neutron-Induced Single Events in a COTS Soft-Error Free SRAM at Low Bias Voltage

This paper presents an experimental study of the sensitivity to 15-MeV neutrons at low bias voltage of advanced low-power SRAMs by Renesas Electronics. The most interesting results are the occurrence of clusters of bitflips, hard errors only visible at low voltage, appearing along with single event...

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Bibliographic Details
Published in2015 15th European Conference on Radiation and Its Effects on Components and Systems (RADECS) pp. 1 - 4
Main Authors Clemente, Juan A., Franco, Francisco J., Villa, Francesca, Baylac, Maud, Ramos, Pablo, Vargas, Vanessa, Mecha, Hortensia, Agapito, Juan A., Velazco, Raoul
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.09.2015
Subjects
CMOS integrated circuits
Electronic mail
Microcontrollers
Neutrons
Radiation effects
Random access memory
Single event upsets
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Summary:This paper presents an experimental study of the sensitivity to 15-MeV neutrons at low bias voltage of advanced low-power SRAMs by Renesas Electronics. The most interesting results are the occurrence of clusters of bitflips, hard errors only visible at low voltage, appearing along with single event upsets. The physical mechanisms are briefly discussed.
ISBN:9781509002320
1509002324
DOI:10.1109/RADECS.2015.7365640