Sub-Diffraction-Limit Mm-Wave Near-Field Imaging using Truncated Silicon Rod

We propose a straightforward truncated silicon rod as a near-field imaging probe for the mm-wave and terahertz (THz) frequency ranges, with potential for applications in semiconductor wafer inspection. Semiconductor wafers have high refractive index, which is well matched to the fundamental mode of...

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Bibliographic Details
Published in2023 48th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz) pp. 1 - 2
Main Authors Kawamoto, Yuma, Gallego, Daniel C., Rivera-Lavado, Alejandro, Nagatsuma, Tadao, Headland, Daniel, Carpintero, Guillermo
Format Conference Proceeding
LanguageEnglish
Published IEEE 17.09.2023
Subjects
Diffraction
Image resolution
Inspection
Refractive index
Silicon
Surface waves
Terahertz wave imaging
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Summary:We propose a straightforward truncated silicon rod as a near-field imaging probe for the mm-wave and terahertz (THz) frequency ranges, with potential for applications in semiconductor wafer inspection. Semiconductor wafers have high refractive index, which is well matched to the fundamental mode of the truncated rod, leading to low reflection. In contrast, a more-conductive surface will generate stronger reflections. We take advantage of the difference in these reflections and generate an image of a chromium-on-silicon test target. The resolution is 0.75 mm, which is less than one quarter of the free-space wavelength at the center of the operation frequencies, and is below the diffraction limit.
ISSN:2162-2035
DOI:10.1109/IRMMW-THz57677.2023.10299044