Thermal characterization of the intrinsic noise parameters for AlGaN/GaN HEMTs

The noise parameters of AlGaN/GaN-HEMTs are measured between 298 K and 423 K. The temperature dependent access resistances are de-embedded and the intrinsic noise parameters are studied as a function of temperature. It is shown that the parasitic access resistances are limiting the high-frequency no...

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Bibliographic Details
Published in2008 IEEE MTT-S International Microwave Symposium Digest pp. 463 - 466
Main Authors Thorsell, M., Andersson, K., Fagerlind, M., Sudow, M., Nilsson, P.-A., Rorsman, N.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.06.2008
Subjects
Aluminum gallium nitride
Gallium nitride
HEMTs
MODFETs
Noise
Temperature dependence
Temperature measurement
thermal
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Summary:The noise parameters of AlGaN/GaN-HEMTs are measured between 298 K and 423 K. The temperature dependent access resistances are de-embedded and the intrinsic noise parameters are studied as a function of temperature. It is shown that the parasitic access resistances are limiting the high-frequency noise performance of the AlGaN/GaN-HEMT.The intrinsic noise sources are extracted and a noise model is derived and verified for a MMIC amplifier.
ISBN:1424417805
9781424417803
1424417813
9781424417810
ISSN:0149-645X
2576-7216
DOI:10.1109/MWSYM.2008.4633203