Analysis of carrier lifetime effects on HV SIC PiN diodes at elevated pulsed switching conditions

Future Army power systems will require utilizing high-power and high-voltage SiC devices in order to meet size, weight, volume, and high power density for fast switching requirements at both component and system levels. This paper presents the modeling and simulation of a high voltage (>12kV) sil...

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Bibliographic Details
Published in2015 IEEE Pulsed Power Conference (PPC) pp. 1 - 6
Main Authors Ogunniyi, Aderinto A., O'Brien, Heather K., Hinojosa, Miguel, Cheng, Lin, Scozzie, Charles J., Pushpakaran, Bejoy N., Lacouture, Shelby, Bayne, Stephen B.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.05.2015
Subjects
Charge carrier lifetime
Conductivity
Numerical models
PIN photodiodes
Semiconductor process modeling
Silicon carbide
Temperature dependence
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Summary:Future Army power systems will require utilizing high-power and high-voltage SiC devices in order to meet size, weight, volume, and high power density for fast switching requirements at both component and system levels. This paper presents the modeling and simulation of a high voltage (>12kV) silicon carbide PiN diode for high action pulsed power applications. A model of a high power PiN diode was developed in the Silvaco Atlas software to better understand the extreme electrical stresses in the power diode when subjected to a high-current pulse. The impact of carrier lifetime on pulsed switching performance of silicon carbide (SiC) PiN diode was investigated.
ISSN:2158-4915
2158-4923
DOI:10.1109/PPC.2015.7296946