Meta-parameterisation of power semiconductor devices for studies of efficiency and power density in high power converters

This paper presents a meta-parameterised approach for evaluation of power switch modules (PSMs) in high power converters (HPCs). General models and parameters for evaluation of power losses and volume of PSMs are presented. Then, meta-parameterisation is performed for the High Power Semiconductor De...

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Bibliographic Details
Published in2016 18th European Conference on Power Electronics and Applications (EPE'16 ECCE Europe) pp. 1 - 10
Main Authors Barrera-Cardenas, Rene A., Isobe, Takanori, Molinas, Marta
Format Conference Proceeding
LanguageEnglish
Published Jointly owned by IEEE-PELS and EPE Association 01.09.2016
Subjects
Design
Heat sinks
High power discrete device
IGBT
IGCT
Insulated gate bipolar transistors
Power semiconductor device
Power semiconductor devices
Switches
Thermal resistance
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Summary:This paper presents a meta-parameterised approach for evaluation of power switch modules (PSMs) in high power converters (HPCs). General models and parameters for evaluation of power losses and volume of PSMs are presented. Then, meta-parameterisation is performed for the High Power Semiconductor Devices (HPSDs) that are commonly used in HPCs, considering two types of package, press-pack and module type, and including IGBT, IGCT and IEGT chip technologies. A comparative analysis based on current capability and its dependency with the frequency in voltage source converters is introduced for the considered HPSD technologies. Press-pack IGBT technology shows the higher current capability and power dissipation performance, so it can be good choice for increase the operative frequency in HPCs.
DOI:10.1109/EPE.2016.7695625