Realization of GaN-based high frequency planar schottky barrier diodes through air-bridge technology

GaN-based planar schottky barrier diodes with potential applications in high frequency multipliers were designed, fabricated and characterized. The parasitic parameters of diodes were reduced by the air-birdge technology and ultrathin substrate. The total capacitance of diodes was only 12.5fF, and t...

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Published in2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) pp. 1 - 3
Main Authors Shixiong Liang, Yulong Fang, Dong Xing, Junlong Wang, Lisen Zhang, Dabao Yang, Xiongwen Zhang, Zhihong Feng
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.10.2014
Subjects
Abstracts
Conductivity
Current measurement
Gallium nitride
Gold
Schottky barriers
Schottky diodes
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Summary:GaN-based planar schottky barrier diodes with potential applications in high frequency multipliers were designed, fabricated and characterized. The parasitic parameters of diodes were reduced by the air-birdge technology and ultrathin substrate. The total capacitance of diodes was only 12.5fF, and the series resistance is 16Ω. The Diodes with a thickness of 50μm and an anode diameter of 5μm had a hard breakdown voltage of 22.8V, the turn-on voltage of 0.45V@10μA and a cut-off frequency (f c ) of 796GHz.
ISBN:9781479932962
1479932965
DOI:10.1109/ICSICT.2014.7021212