Effect of ion-irradiation-induced defect on the optically active Er ions in Er-doped silicon-rich silicon oxide

The effect of ion-irradiation induced defect on the optically active Er 3+ ions in Er doped silicon-rich silicon oxide (SRSO) film is investigated. We find that the initial presence of defects strongly reduces the fraction of Er ions that can be excited via nc-Si even after their removal via high-te...

Full description

Saved in:
Bibliographic Details
Published in2007 Conference on Lasers and Electro-Optics - Pacific Rim pp. 1 - 2
Main Authors Hoon Jeong, Se-young Seo, Shin, J.H.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.08.2007
Subjects
Annealing
Erbium
Luminescence
Microstructure
Optical films
Optical sensors
Particle beam optics
Semiconductor films
Silicon
Stimulated emission
Online AccessGet full text

Cover

More Information
Summary:The effect of ion-irradiation induced defect on the optically active Er 3+ ions in Er doped silicon-rich silicon oxide (SRSO) film is investigated. We find that the initial presence of defects strongly reduces the fraction of Er ions that can be excited via nc-Si even after their removal via high-temperature annealing.
ISBN:1424411734
9781424411733
DOI:10.1109/CLEOPR.2007.4391346