Terahertz open-aperture Z-scan in doped InGaAs

We have performed open-aperture Z-scan measurements on n-doped InGaAs using intense few-cycle terahertz pulses. We observe a significant bleaching of the terahertz pulse absorption attributed to terahertz-electric-field-induced intervalley carrier scattering.

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Bibliographic Details
Published in2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum electronics and Laser Science Conference pp. 1 - 2
Main Authors Razzari, L., Su, F.H., Sharma, G., Blanchard, F., Ayesheshim, A., Bandulet, H.-C., Morandotti, R., Kieffer, J.-C., Ozaki, T., Reid, M., Hegmann, F.A.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.05.2009
Subjects
(300.6420) Spectroscopy
(300.6495) Spectroscopy
(300.6500) Spectroscopy
Bleaching
Electrons
Indium gallium arsenide
nonlinear
Nonlinear optics
Optical films
Optical pulses
Optical scattering
Spectroscopy
Substrates
terahertz
time-resolved
Ultrafast optics
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Summary:We have performed open-aperture Z-scan measurements on n-doped InGaAs using intense few-cycle terahertz pulses. We observe a significant bleaching of the terahertz pulse absorption attributed to terahertz-electric-field-induced intervalley carrier scattering.
ISSN:2160-9004
DOI:10.1364/IQEC.2009.IMH7