A WDM-Compatible 4 × 32-Gb/s CMOS-driven electro-absorption modulator array

A four-channel electro-absorption-modulator array, driven by 32-nm CMOS drivers providing 2-V peak-to-peak output swing, operates with BER <; 10 -12 at a data rate of 4 × 32 Gb/s and dissipates 170 mW of power.

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Bibliographic Details
Published in2015 Optical Fiber Communications Conference and Exhibition (OFC) pp. 1 - 3
Main Authors Lee, B. G., Rimolo-Donadio, R., Rylyakov, A. V., Proesel, J., Bulzacchelli, J. F., Baks, C. W., Meghelli, M., Schow, C. L., Ramaswamy, A., Roth, J. E., Shin, J. H., Koch, B., Sparacin, D. K., Fish, G. A.
Format Conference Proceeding
LanguageEnglish
Published OSA 01.03.2015
Subjects
Arrays
Bit error rate
CMOS integrated circuits
Modulation
Optical attenuators
Optical transmitters
Optical waveguides
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Summary:A four-channel electro-absorption-modulator array, driven by 32-nm CMOS drivers providing 2-V peak-to-peak output swing, operates with BER <; 10 -12 at a data rate of 4 × 32 Gb/s and dissipates 170 mW of power.
DOI:10.1364/ofc.2015.tu3g.3