Characterisation of an InAs quantum dot semiconductor disk laser

We report the performance of a 1030 nm semiconductor disk laser with gain region consisting of multiple sub-monolayers of InAs/GaAs quantum dots. Maximum output power of 512 mW was achieved with 20% slope efficiency.

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Bibliographic Details
Published in2008 Conference on Lasers and Electro-Optics and 2008 Conference on Quantum Electronics and Laser Science pp. 1 - 2
Main Authors Schlosser, P., Calvez, S., Hastie, J.E., Shirong Jin, Germann, T.D., Strittmatter, A., Pohl, U.W., Bimberg, D., Dawson, M.D.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.05.2008
Subjects
(140.7260) Vertical cavity surface emitting lasers
(250.5590) Quantum-well
Optical surface waves
Power generation
Power lasers
Pump lasers
Quantum dot lasers
Resonance
Semiconductor laser arrays
Semiconductor lasers
Surface emitting lasers
Vertical cavity surface emitting lasers
wire and -dot devices
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Summary:We report the performance of a 1030 nm semiconductor disk laser with gain region consisting of multiple sub-monolayers of InAs/GaAs quantum dots. Maximum output power of 512 mW was achieved with 20% slope efficiency.
ISBN:1557528594
9781557528599
DOI:10.1109/CLEO.2008.4551842