Terahertz emission from nonpolar gallium nitride

We observe polarized terahertz emission from nonpolar gallium nitride due to an in-plane polarization terminated by stacking faults. A measured flip of the THz waveform polarity agrees with carrier transport in an in-plane electric field.

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Bibliographic Details
Published in2008 Conference on Lasers and Electro-Optics and 2008 Conference on Quantum Electronics and Laser Science pp. 1 - 2
Main Authors Metcalfe, G.D., Readinger, E.D., Hongen Shen, Wraback, M., Hirai, A., Young, E., Speck, J.S.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.05.2008
Subjects
(160.6000) Semiconductor materials
(320.7120) Ultrafast phenomena
Gallium nitride
III-V semiconductor materials
Optical materials
Optical polarization
Optical sensors
Piezoelectric polarization
Semiconductor materials
Stacking
Stimulated emission
Substrates
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Summary:We observe polarized terahertz emission from nonpolar gallium nitride due to an in-plane polarization terminated by stacking faults. A measured flip of the THz waveform polarity agrees with carrier transport in an in-plane electric field.
ISBN:1557528594
9781557528599
DOI:10.1109/CLEO.2008.4551803