Spectrotemporal gain bandwidth measurement in an InGaAs/GaAsP quantum well vertical-external-cavity surface-emitting semiconductor laser

Analysis of spectral condensation in a VECSEL with a near-antiresonant gain structure incorporating InGaAs/GaAsP quantum wells emitting around 1030 nm shows the effective FWHM gain bandwidth of this laser to be 32 nm.

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Bibliographic Details
Published in2008 Conference on Lasers and Electro-Optics and 2008 Conference on Quantum Electronics and Laser Science pp. 1 - 2
Main Authors Hoogland, S., Garnache, A., Wilcox, K.G., Mihoubi, Z., Elsmere, S., Quarterman, A., Tropper, A.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.05.2008
Subjects
(140.4050) Mode-locked lasers
(140.5960) Semiconductor lasers
Bandwidth
Extraterrestrial measurements
Gain measurement
Indium gallium arsenide
Laser mode locking
Laser modes
Quantum well lasers
Semiconductor lasers
Surface emitting lasers
Vertical cavity surface emitting lasers
Vertical emitting lasers
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Summary:Analysis of spectral condensation in a VECSEL with a near-antiresonant gain structure incorporating InGaAs/GaAsP quantum wells emitting around 1030 nm shows the effective FWHM gain bandwidth of this laser to be 32 nm.
ISBN:1557528594
9781557528599
ISSN:2160-9047
DOI:10.1109/CLEO.2008.4551843