Si/Si bonding based on self-propagating exothermic reaction

Self-propagating exothermic reaction of Al/Ni multilayer film has been developed as a heat source with small heat region and high reaction rate in the field of bonding. In this paper, using this kind of localized and rapid heat source, solder preforms with different melting point such as SAC305 (217...

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Bibliographic Details
Published in2016 17th International Conference on Electronic Packaging Technology (ICEPT) pp. 1180 - 1184
Main Authors Anna Zhang, Zheng Zhou, Wenbo Zhu, Liping Mo, Fengshun Wu
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.08.2016
Subjects
Al/Ni multilayer film
bonding
Coatings
Combustion
Gold
Heating
Reliability engineering
self-propagating exothermic reaction
Silicon
solder
Substrates
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Summary:Self-propagating exothermic reaction of Al/Ni multilayer film has been developed as a heat source with small heat region and high reaction rate in the field of bonding. In this paper, using this kind of localized and rapid heat source, solder preforms with different melting point such as SAC305 (217°C), Au80Sn20 (278°C) and A88Ge12 (356°C) have been applied to achieve the Si/Si bonding includes stacked Si bonding with the condition of 125°C preheating and 2MPa pressures, and the cross-sectional microstructure of bonding joints were observed. Subsequently, the shear tests of Si/Si bonding joints have been conducted and the results proved that the self-propagating exothermic reaction of Al/Ni multilayer is an efficient heat source to achieve the strong Si/Si bonding.
DOI:10.1109/ICEPT.2016.7583334