A 1.6-2.6GHz 29dBm injection-locked power amplifier with 64% peak PAE in 65nm CMOS

• Published in: 2011 Proceedings of the ESSCIRC (ESSCIRC) pp. 299 - 302
• Main Authors: Lindstrand, J., Bryant, C., Tormanen, M., Sjoland, H.
• Format: Conference Proceeding
• Language: English
• Published: IEEE 01.09.2011
• Subjects: CMOS; CMOS integrated circuits; CMOS technology; Electrical Engineering, Electronic Engineering, Information Engineering; Elektroteknik och elektronik; Engineering and Technology; Hybrid EER; Injection lock; Logic gates; Power amplifier; Power amplifiers; Power efficiency; Power generation; Poweramplifier; Teknik; Transistors; Wideband

This paper presents a wideband CMOS power amplifier intended for cellular handset applications. The circuit exploits injection locking to achieve a power gain of 20.5dB from a single stage amplifier. The maximum output power of 29dBm, with a peak drain- and power-added-efficiency (PAE) of 66% and 64...