A 1.6-2.6GHz 29dBm injection-locked power amplifier with 64% peak PAE in 65nm CMOS
This paper presents a wideband CMOS power amplifier intended for cellular handset applications. The circuit exploits injection locking to achieve a power gain of 20.5dB from a single stage amplifier. The maximum output power of 29dBm, with a peak drain- and power-added-efficiency (PAE) of 66% and 64...
Saved in:
Published in | 2011 Proceedings of the ESSCIRC (ESSCIRC) pp. 299 - 302 |
---|---|
Main Authors | , , , |
Format | Conference Proceeding |
Language | English |
Published |
IEEE
01.09.2011
|
Subjects | |
Online Access | Get full text |
Cover
Loading…
Summary: | This paper presents a wideband CMOS power amplifier intended for cellular handset applications. The circuit exploits injection locking to achieve a power gain of 20.5dB from a single stage amplifier. The maximum output power of 29dBm, with a peak drain- and power-added-efficiency (PAE) of 66% and 64%, respectively, occurs at a center frequency of 2GHz with a 3V supply. A cross-coupled cascode topology enables a wideband PAE exceeding 50% from 1.6 to 2.6GHz. For output power levels below 4dBm the circuit operates as a linear class AB amplifier with a power consumption of 17mW from a 0.48V supply. The power gain of 20.5dB is kept constant for all output powers; with an AM-AM- and AM-PM-conversion of 0.2dB and 17deg, respectively, over the entire WCDMA dynamic range of 80dB. The circuit is implemented in a standard 65nm CMOS process with a total chip area of 0.52×0.48mm 2 including pads. |
---|---|
ISBN: | 9781457707032 1457707039 |
ISSN: | 1930-8833 2643-1319 |
DOI: | 10.1109/ESSCIRC.2011.6044966 |