A high-sensitivity broadband image sensor using CuInGaSe2 thin films

We have fabricated a novel CMOS image sensor using polycrystalline CuInGaSe 2 (CIGS) thin films as an absorber layer, which outperforms conventional crystalline Si (c-Si) CMOS image sensors regarding higher external quantum efficiency(EQE) and wider spectral sensitive range. Development of this imag...

Full description

Saved in:
Bibliographic Details
Published in2008 IEEE International Electron Devices Meeting pp. 1 - 4
Main Authors Matsushima, O., Miyazaki, K., Takaoka, M., Maekawa, T., Sekiguchi, H., Fuchikami, T., Moriwake, M., Takasu, H., Ishizuka, S., Sakurai, K., Yamada, A., Niki, S.
Format Conference Proceeding
LanguageEnglish
Japanese
Published IEEE 01.12.2008
Subjects
CMOS image sensors
Crystallization
Dark current
Fabrication
Image sensors
Large scale integration
Photovoltaic cells
Pixel
Semiconductor thin films
Thin film sensors
Online AccessGet full text

Cover

More Information
Summary:We have fabricated a novel CMOS image sensor using polycrystalline CuInGaSe 2 (CIGS) thin films as an absorber layer, which outperforms conventional crystalline Si (c-Si) CMOS image sensors regarding higher external quantum efficiency(EQE) and wider spectral sensitive range. Development of this image sensor has been realized due to dark current suppression by the combination of microfabrication processes of LSI and solar cell fabrication technologies. The newly developed CIGS image sensors were capable to capture night scenes. Image sensors with 352 (H) times 288 (V) pixels (CIF), and 640 (H) times 480 (V) pixels (VGA) with each pixel size of 10 mum times 10 mum, have been fabricated.
ISBN:9781424423774
1424423775
ISSN:0163-1918
2156-017X
DOI:10.1109/IEDM.2008.4796669