Asymmetric dual grating gate bilayer graphene FET for detection of terahertz radiation

We report on detection of terahertz radiation by using bilayer graphene-based FET with asymmetric grating gates. The device was fabricated with a stack of h-BN/Graphene/h-BN with a back gate as well as an asymmetric dual grating top gates. It was subjected to terahertz radiation at frequencies of 15...

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Published in2017 42nd International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz) pp. 1 - 2
Main Authors Delgado Notario, J. A., Clerico, V., Meziani, Y. M., Diez, E., Velazquez, J. E., Taniguchi, T., Watanabe, K., Yadav, D., Otsuji, T.
Format Conference Proceeding
LanguageEnglish
Japanese
Published IEEE 01.08.2017
Subjects
Current measurement
Electric potential
Graphene
Gratings
Logic gates
Photoconductivity
Terahertz radiation
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Summary:We report on detection of terahertz radiation by using bilayer graphene-based FET with asymmetric grating gates. The device was fabricated with a stack of h-BN/Graphene/h-BN with a back gate as well as an asymmetric dual grating top gates. It was subjected to terahertz radiation at frequencies of 150 and 300 GHz at 4K and a clear photocurrent was obtained.
ISSN:2162-2035
DOI:10.1109/IRMMW-THz.2017.8067235