GaN-based Gate Injection Transistors for power switching applications

GaN-based Gate Injection Transistors (GITs) with p-type gate over AlGaN/GaN heterojunction serve normally-off operations with low on-state resistances owing to the conductivity modulation by injection of holes. Established basic technologies on the GIT have shown promising features for switching app...

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Bibliographic Details
Published in2014 IEEE International Electron Devices Meeting pp. 11.3.1 - 11.3.4
Main Authors Ueda, Tetsuzo, Handa, Hiroyuki, Kinoshita, Yusuke, Umeda, Hidekazu, Ujita, Shinji, Kajitani, Ryo, Ogawa, Masahiro, Tanaka, Kenichiro, Morita, Tatsuo, Tamura, Satoshi, Ishida, Hidetoshi, Ishida, Masahiro
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.12.2014
Subjects
Aluminum gallium nitride
Flip-chip devices
Gallium nitride
Logic gates
Silicon
Switches
Transistors
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Summary:GaN-based Gate Injection Transistors (GITs) with p-type gate over AlGaN/GaN heterojunction serve normally-off operations with low on-state resistances owing to the conductivity modulation by injection of holes. Established basic technologies on the GIT have shown promising features for switching applications. Further improvement of the performances would extend the applications and lead to the widespread use. In this paper, recent technologies on the GITs to improve the performances and extract the full potential are described. These include extension of the wafer diameter of Si up to 8 inch, InAlGaN quaternary alloy to reduce the series resistances, shortening the gate length to improve the device performances, integration of the gate driver and flip-chip assembly for faster switching.
ISSN:0163-1918
2156-017X
DOI:10.1109/IEDM.2014.7047031