Design, preparation and performance of Cu(In, Ga)(S, Se)2/Zn(O, S)/ZnO:Al solar cells

Junction formation by chemical bath deposition of CdS is a well established and robust process. To avoid the well known drawbacks of this approach, we propose to omit the CdS buffer layer and to directly sputter a modified window layer where Zn(O, S) is used instead of ZnO to improve the band line-u...

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Bibliographic Details
Published in2013 IEEE 39th Photovoltaic Specialists Conference (PVSC) pp. 0853 - 0856
Main Authors Klenk, Reiner, Gerhardt, Paul, Lauermann, Iver, Steigert, Alexander, Stober, Frederick, Hergert, Frank, Zweigart, Siegmund, Lux-Steiner, Martha C.
Format Conference Proceeding
LanguageEnglish
Japanese
Published IEEE 01.06.2013
Subjects
Buffer layers
chalcopyrites
junction formation
Photovoltaic cells
Production
Sputtering
Substrates
Zinc oxide
Zn(O
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Summary:Junction formation by chemical bath deposition of CdS is a well established and robust process. To avoid the well known drawbacks of this approach, we propose to omit the CdS buffer layer and to directly sputter a modified window layer where Zn(O, S) is used instead of ZnO to improve the band line-up. This could result in completely dry in-line manufacturing of Cd-free modules using only proven deposition technologies. Key requisites for a new module structure are that the efficiency is not adversely affected and that the process is stable with a wide process window. For a first assessment, tests were carried out using absorbers from industrial production.
ISSN:0160-8371
DOI:10.1109/PVSC.2013.6744279